| 摘要 |
PURPOSE: To provide a light-emitting diode, which can maintain a high luminous efficiency over a long period. CONSTITUTION: A cathode electrode 19 is formed on the lower surface of a semiconductor substrate, which consists of a substrate layer 11, a buffer layer 12, an n-type clad layer 13, an active layer 14, a p-type clad layer 15, first and second current blocking layers 16a and 16b and first to sixth contact layers 17a to 17f, and an anode electrode 18 is formed on the center of the upper surface of the substrate. Protrusions are made to generated on the surface of the substrate by changing in order the intrinsic grating constant of a semiconductor material forming the layers 17b, 17c, 17d, 17e and 17f. |
