| 摘要 |
<p>PURPOSE: To write and read specific bits of the data of a storage device. CONSTITUTION: Transistor gates TG1Xn, TG1XnN and a bit enable line BITXnEN for controlling these transistor gates are installed on bit line pairs, BITXn and BITXn/, to which a write amplifier WAPXn is connected. The transistors, TG1Xn and TG1XnN, are made on-off by the rewrite bit control signal data inputted to the bit enable line BITXnEN. By this, a required bit line pair alone is electrically connected and rewrite data is inputted only to the memory elements of the write amp WAPXn and the memory cell (X, Y) which are connected to the bit line pairs BITXn and BITXn/connected as mentioned above, to be written and to conduct rewriting or writing of the required specific bit by one instruction without reading once the data stored in the memory.</p> |
