| 摘要 |
PROBLEM TO BE SOLVED: To provide a sequentially accessible memory device which has such a high correcting capability that, when an a fault or error in rows or column, allows only the fault or error to be suitably corrected. SOLUTION: The memory device has a memory matrix (SM), a row select circuit (ZPTR) and column select circuits (SPTR, SCH), which circuit elements are connected as follows. That is, the memory device is arranged so that, in the presence of a fault or error in rows or columns, the device can correct the fault or error individually or can generate a small number of sequentially continual bits.
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