| 摘要 |
PURPOSE: To prevent the generation of a crack in a substrate, which is caused by the lattice mismatching of an InGaAlN epitaxial film, by using an LaNdGaO single crystal film as the substrate. CONSTITUTION: The lattice constant of a substrate 1 is made approximate to the lattice constant of an InGaAlN epitaxial film by using an Laz Nd1-z GaO3 single crystal (0<z<=1) film as the substrate 1, the lattice mismatching and mismatching dislocation of the epitaxial film can be reduced and in the case where the InGaAlN epitaxial film of a tercomposition is used in the constitution of a semiconductor light-emitting element, the lattice constant can be matched with the tercomposition. Moreover, as a grown In1-x-y Gax Aly N (0<=x<=1, 0<=x+y<=1) buffer layer 2 is provided on the substrate 1 at such a low temperature as the deterioration of the surface of the oxide substrate is not caused, the single crystal film can be grown without polycrystallizing the surface of the substrate. Accordingly, the growth temperature of the buffer layer 2 is set at a growth temperature of 300 deg.C or higher and 1000 deg.C or lower at the time of the growth of the buffer layer 2, a full migration is not caused, the flat and continuous buffer layer 2 can be deposited and the epitaxial film having a good crystalizability can be grown on this buffer layer 2. |
