| 摘要 |
PURPOSE: To provide a dynamic semiconductor storage device, which is applicable to the stacked cell provided by previously forming the bit lines, capable of increasing cell capacity and applicable to a high dielectric film, even two cells are arranged at the three intersections of word lines, improve the cell freeness, and permit the device to be applicable to the cell provided by forming the bit line later and to the trench cell. CONSTITUTION: A DRAM is composed of a memory cell array, which is formed by arranging two memory cells on every three intersections among the 18 intersections of a plurality of word lines 14 and a plurality of bit lines 18 in the work line direction and the bit line direction. The bit line 18 is arranged by inclining it from the direction that orthogonally intersects with the work line 14, and an active area 13 that connects the bit line contacts 15 and 17 of the memory cell with the storage node(SN) contact 19 is arranged by inclining the area 13 from the direction that orthogonally intersects with the word line 14. |
