PATTERN FORMATION METHOD AND PHOTORESIST MATERIAL FOR IT

摘要

PURPOSE: To provide a pattern formation method by which a pattern is formed at one exposure and development, and a radiation sensitive composition used for it by reducing dimensional fluctuation and deformation of a pattern caused by interference action and irregular reflection due to reflection light from a substrate in the case of forming a fine pattern by lithography technology. CONSTITUTION: After the second photoresist film 3 whose absorbency in an exposure wavelength is smaller and sensitivity is lower than the first photoresist film is formed on the first photoresist film 2, an exposure development is performed. Largeness of the absorbency of the first resist film 2 reduces the reflection light from the substrate 1 and the sensitivity of the first resist film 2 is higher than that of the resist film 3 so that the pattern size of the first photoresist 2 can be reduced to less than the pattern size of the second photoresist 2 so that the dimensional fluctuation and deformation of the pattern can be reduced.