发明名称 |
THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND LIQUID CRYSTAL DISPLAY SYSTEM |
摘要 |
<p>PURPOSE: To avoid the burning or after image due to block parting on display or the dispersion in introduced voltage while enhancing the TFT characteristics. CONSTITUTION: An insulating film 3 covering a patterned shielding film 2 is formed on a transparent substrate 1. Next, a source region 5 and a drain region 5 made of the first low resistant semiconductor layers are formed in mutually separated state to be respectively connected to a source electrode 4 and a drain electrode 4. Next, the second semiconductor layer 6 is formed extending over the source region 5 and the drain region 5 to form a gate electrode 8 on these regions 5 through the intermediary of a gate insulating film 7. In such a constitution, the first semiconductor layer is formed of the films 5 while the source.drain regions 5 and the gate electrode 8 are self-aligningly formed with the patterned shielding film 2.</p> |
申请公布号 |
JPH08288519(A) |
申请公布日期 |
1996.11.01 |
申请号 |
JP19950093898 |
申请日期 |
1995.04.19 |
申请人 |
SHARP CORP |
发明人 |
KISHIDA YOSHIFUMI;NAKADA YUKIHIKO |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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