| 摘要 |
<p>PURPOSE: To remove an unwanted film inside a reaction furnace as a whole and to restrain particles from being generated at the time of film formation by a method wherein a cleaning process is performed in at least two steps in which a cleaning condition is different. CONSTITUTION: A valve 25 is opened, nitrogen trifluoride is introduced into a reaction furnace via a cleaning-gas supply pipe 23, a valve 22 is opened, and argon is introduced into the reaction furnace via the cleaning-gas supply pipe 23. Then, an inessential film on the surface of a suspector and that on the surface of a mask are removed by a plasma cleaning operation. In succession, while a discharge is being continued, the valve 25 is opened. Then, the nitrogen trifluoride is introduced into the reaction furnace via the cleaning-gas supply pipe, the valve 22 is opened, and the argon is introduced into the reaction furnace via the cleaning-gas supply pipe. Then, the inessential film is removed by a plasma cleaning operation.</p> |
