| 摘要 |
PURPOSE: To provide a multiple-wavelength light-emitting semiconductor element, which can obtain light of different colors (a multiple wavelength) through one light extraction port. CONSTITUTION: A GaInP active layer 3, an upper AlGaInP clad layer 4 and an Alx Ga1-x As (x<0.3) luminous layer 6 are epitaxially grown in order on a GaAs substrate 1. The energy band gap of the layer 6 is smaller than that of the layer 3. When a current is made to flow between electrodes 11 and 12, light of a wavelength to respond to the energy band gap of the layer 3 is generated from the layer 3. One part of this light is made to pass through the layers 4 and 6 and is emitted to the outside through a light extraction port 10. By making the light, which is generated in the layer 3, pass through the layer 6, the layer 6 is optically excited, light having a wavelength to respond to the energy band gap of the layer 6 is generated from this layer 6 and this light is also emitted to the outside through the port 10. |
