| 摘要 |
PROBLEM TO BE SOLVED: To achieve a compact and reliable non-volatile random access memory(NVRAM) device. SOLUTION: An NVRAM array 30 has a part 31 being related to a drive line segment DSL11 . The drive line segment DSL11 is connected to a drive line DL1 by a control transistor 32. In the arrangement, a conductive member that is the part of the drive line segment DLS11 can be formed at the nearly the same height as a memory capacity 118. In the arrangement, furthermore, the drive lines DL1 and DL2 and bit lines BL11 , BL12 , BL13 , and BL14 are formed not between transistors but on the control memory transistors 32 and 34, thus forming a compact and reliable NVRAM device. |
