| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-leakage contact between a metallization step and a doped electronic element by a method wherein a first layer located on a first electronic element is protected, the first layer is removed from a second element, the first layer is removed from the first element, and material is deposited in a first and a second opening. SOLUTION: An unprotected part of a first dopant layer 18 is removed, and then a mask layer is removed. A part of the first dopant layer 18 left unremoved on a thin dopant layer 18 is removed before an annealing step. Dopant is diffused into a lightly doped region 16 of an electronic element, 12 from the first dopant layer 18 through an annearling cycle. By this setup, a part of the lightly doped region 16 is prevented from coming into electrical contact with a metallization contact, so that a leaky MC contact can be effectively prevented from being formed. |
