发明名称 |
BESCHICHTUNG DURCH THERMISCHE ZERSETZUNG ODER REAKTION CHEMI SCHER VERBINDUNGEN BEI ERHOEHTER TEMPERATUR |
摘要 |
A process for forming a film on the surface of a substrate by a gas phase method in the presence of a catalyst used in the solid state electronics at a predetermined distance from the surface of the substrate on which the film is to be formed and a process for forming a silicon oxide or silicon nitride in the presence of a catalyst selected from the group comprising platinum and the like. |
申请公布号 |
DE1914411(B2) |
申请公布日期 |
1972.01.27 |
申请号 |
DE19691914411 |
申请日期 |
1969.03.21 |
申请人 |
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发明人 |
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分类号 |
C04B41/45;C04B41/50;C04B41/81;C04B41/87;C23C16/452;H01L23/29;H01L29/00;(IPC1-7):23C11/08 |
主分类号 |
C04B41/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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