发明名称 BESCHICHTUNG DURCH THERMISCHE ZERSETZUNG ODER REAKTION CHEMI SCHER VERBINDUNGEN BEI ERHOEHTER TEMPERATUR
摘要 A process for forming a film on the surface of a substrate by a gas phase method in the presence of a catalyst used in the solid state electronics at a predetermined distance from the surface of the substrate on which the film is to be formed and a process for forming a silicon oxide or silicon nitride in the presence of a catalyst selected from the group comprising platinum and the like.
申请公布号 DE1914411(B2) 申请公布日期 1972.01.27
申请号 DE19691914411 申请日期 1969.03.21
申请人 发明人
分类号 C04B41/45;C04B41/50;C04B41/81;C04B41/87;C23C16/452;H01L23/29;H01L29/00;(IPC1-7):23C11/08 主分类号 C04B41/45
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