发明名称 Verfahren zur Herstellung einer Solarzelle
摘要 A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conductivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to the room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate. <IMAGE>
申请公布号 DE69120524(T2) 申请公布日期 1996.10.31
申请号 DE1991620524T 申请日期 1991.04.10
申请人 NIPPON TELEGRAPH AND TELEPHONE CORP., TOKIO/TOKYO, JP;MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 OOHARA, TAKAHIKO, HIGASHIMURAYAMA-SHI, TOKYO, JP;OHMACHI, YOSHIRO, HIGASHIYAMATO-SHI, TOKYO, JP;KADOTA, YOSHIAKI, EBINA-SHI, KANAGAWA-KEN, JP;MITSUI, KOTARO, C/O MITSUBISHI DENKI K.K., 4-CHOME, ITAMI-SHI, HYOGO-KEN, JP;OGASAWARA, NOBUYOSHI, C/O MITSUBISHI DENKI K.K, 4-CHOME, ITAMI-SHI, HYOGO-KEN, JP;NISHIMURA, TAKASHI, C/O MITSUBISHI DENKI K.K., 4-CHOME, ITAMI-SHI, HYOGO-KEN, JP
分类号 H01L31/04;H01L21/20;H01L27/142;H01L31/0224;H01L31/0693;H01L31/18;(IPC1-7):H01L31/18;H01L31/068 主分类号 H01L31/04
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