| 摘要 |
A semiconductor device is made by forming a metallic wiring pattern 14 on a semiconductor substrate, an insulating film 15 of SiN on the wiring pattern, a polyimide film 16 on the insulating film, patterning the polyimide film, selectively etching 17 the insulating film using the polyimide as a mask, ashing the surface of the polyimide (Figure 2F) using O 2 plasma, and heat treating the polyimide pattern to form an imide coupling. Ashing the polyimide pattern obviates the influence of the etchant. The method reduces corrosion of portions where the wiring pattern is exposed to the outside. Ashing followed by heat treatment eliminates the influence of oxygen which would otherwise lower the adhesion strength between the polyimide and the resin. A preliminary heat treatment can be used after patterning the polyimide film and the solvent in the polyimide evaporated. This reduces degassing when the insulating film is etched immediately following a preliminary heat treatment. |
