发明名称 |
Method of programming a semiconductor memory device |
摘要 |
<p>A programmable EEPROM cell structure consisting in a split-gate structure in series with a coupling capacitor between the floating gate (16) and an additional program gate (19) in order to provide enhanced injection efficiency. The electron injection is controlled by a control gate (17) at the source side. The area of the coupling capacitor is selected with a substantial coupling factor to apply a high voltage to the floating gate (16) during programming so as to produce hot-electron injection at the split point in the channel region between the control gate (17) and the floating gate (16). Submicrosecond programming at a drain voltage not greater than 5 V can thereby be achieved. <IMAGE></p> |
申请公布号 |
EP0740306(A2) |
申请公布日期 |
1996.10.30 |
申请号 |
EP19960111221 |
申请日期 |
1992.01.30 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW |
发明人 |
VAN HOUDT, JAN;GROESENEKEN, GUIDO;MAES, HERMAN |
分类号 |
H01L21/8247;G11C16/04;G11C16/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04;G11C16/06 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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