| 摘要 |
In a bipolar silicon-on-insulator transistor comprising a substrate (1) having a major surface, an oxide layer (2) on said major surface, a silicon layer (3) of a first conductivity type on said oxide layer (2), a base region (4) of a second conductivity type extending into said silicon layer (3), an emitter region (5) of said first conductivity type extending into said base region (4), and a collector region (6) of said first conductivity type extending into said silicon layer (3) at a lateral distance from said base region (4), a plug region (8) of said second conductivity type extends into said silicon layer (3) up to said oxide layer (2) on the opposite side of said emitter region (5) relative to said collector region (6), a portion (8') of said plug region (8) extends laterally along the surface of said oxide layer (2) under at least part of the emitter region (5) towards the collector region (6) at a distance from said base region (4), and said plug region is electrically connected to said base region (4). |
