| 摘要 |
<p>PURPOSE:To obtain the titled panel having the improved occupying ratio of picture element and capable of preventing an influence of each signal lines to the liquid crystal and having a high contrast and a high transmittance by forming a picture element electrode on upper layers of a data line and a timing line, inserting insulating films between them, respectively. CONSTITUTION:The gate insulating film and the gate electrode wiring 2 are mounted on the insulating substrate, after a thin film 1 made of Si is formed to a prescribed shape. And then, after forming a source drain on the substrate, a layer insulating film is formed on the substrate, followed by forming an opening part on the prescribed position thereof, and by forming a source wire 3 thereon. Thus, the timing line 2 and the data line 3 are formed in a grid form, and a transistor is provided on the intersection of the grid to form the active matrix substrate. The layer insulating film is mounted on the obtd. substrate, and the opening part is formed on the prescribed position of the substrate, followed by forming a transparent conductive film on the substrate to form the picture element electrode 4. And then, the spaces S for insulating each electrodes are formed on the liens 2 and 3, respectively, followed by enclosing the liquid crystal in the space to form the titled panel.</p> |
