| 摘要 |
An electroluminescent diode with a negative resistance characteristic at room temperature is obtained by establishing a host semiconductor substrate of gallium arsenide crystal with a deep level acceptor impurity such as manganese as the dominant dopant thereby obtaining a P-type semiconductor. On a surface of the gallium arsenide there is epitaxially grown, e.g., by vapor epitaxy, a region of gallium arsenide doped with an N-type dopant, e.g., tellurium. The latter region provides injection of electrons, the minority carriers, into the high-resistivity region when suitable voltage is applied across the diode. On another surface of the host gallium arsenide substrate removed from the tellurium doped region, a shallow level impurity such as zinc is diffused therein to obtain a region dominated thereby. The diffusion produces a high-resistivity zone bounded by the zinc and manganese dominant regions.
|
