| 摘要 |
In a high-performance semiconductor laser diode which emits short-wavelength light ranging from ultraviolet to green, an n-GaN contact layer 5 is formed on a sapphire substrate 1, then an epitaxial layer, which is comprised of a multilayer of an n-AlGaN cladding layer 7, an undoped GaN active layer 8, a p-AlGaN cladding layer 9, a p-GaN contact layer 10, and a p-type semiconductor reflector 11, is formed on the n-GaN contact layer 5. The rear surface of the sapphire substrate 1 and the surface of the n-type contact layer 5 are configured so that they are nearly flush and constitute a continuous plane on which an electrode 17 to be connected to the n-type contact layer 5 is formed. <IMAGE> |
