Method for reducing the standing wave effect in a photolithography process

摘要

A method for reducing the standing wave effects in a photolithography process of a polysilicon layer (106) is described herein. A anti-reflective coating (108), such as titanium nitride, is deposited over the polysilicon layer (106). Photoresist (110) is then deposited over the anti-reflective coating (108) and a portion of the photoresist (110) is exposed using an optical beam (112). The anti-reflective coating (108) absorbs the optical beam (112) reducing the standing wave effects. A portion of the photoresist material (110) is then removed. Portions of the anti-reflective coating (108) and polysilicon layer (106) not covered by photoresist (110) are then etched away creating a polysilicon line having a more uniform linewidth. <IMAGE>