发明名称 |
Isotropic silicon etch process that is highly selective to tungsten |
摘要 |
<p>A back end of the line dry etch method is disclosed. Etching of a mask oxide and temporary (sacrificial) silicon mandrel occurs following the formation of gate stacks and tungsten studs. The mask oxide is etched selectively to tungsten and silicon through the use of a polymerizing oxide etch. The silicon is etched selectively to both silicon nitride, silicon oxide, and tungsten. The process removes the silicon mandrel and associated silicon residual stringers by removing backside helium cooling, while using HBr as the single species etchant, and by adjusting the duration, the pressure, and the electrode gaps during the silicon etch process. The silicon may be undoped polysilicon, doped polysilicon, or single crystal silicon. <IMAGE></p> |
申请公布号 |
EP0740334(A2) |
申请公布日期 |
1996.10.30 |
申请号 |
EP19960105741 |
申请日期 |
1996.04.11 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ECKSTEIN, ELKE;HOFFMAN, BIRGIT;KIEWRA, EDWARD W.;KOCON, WALDEMAR WALTER;WEISS, MARK JAY |
分类号 |
C23F4/00;H01L21/302;H01L21/3065;H01L21/3213;H01L21/8242;H01L27/108;(IPC1-7):H01L21/321 |
主分类号 |
C23F4/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|