PROCESS FOR THE ANISOTROPIC AND SELECTIVE DRY ETCHING OF NITRIDE OVER THIN OXIDES,申请号EP19950943617-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	PROCESS FOR THE ANISOTROPIC AND SELECTIVE DRY ETCHING OF NITRIDE OVER THIN OXIDES
摘要
申请公布号	EP0739537(A1)	申请公布日期	1996.10.30
申请号	EP19950943617	申请日期	1995.11.13
申请人	NATIONAL SEMICONDUCTOR CORPORATION	发明人	HEBERT, FRANCOIS;BASHIR, RASHID
分类号	H01L21/311;H01L21/66;(IPC1-7):H01L21/311	主分类号	H01L21/311
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Uusia 2,6-disubstituoituja puriinijohdannaisia

Forming an insulating film on a semiconductor device

Metal-free dithiophosphoric acid derivatives

Kannettava kaksitoiminen laite numeeristen signaalien lähettämiseksi/vastaanottamiseksi

Bituminous composition

Forming or cutting press tools

High quality color image compression system

HIGH PURITY MEMBRANE NITROGEN

FLANGELESS FIRE RING HOLDER

ESCALATOR HAVING LATERAL SAFETY BOUNDARIES

COIN DISPENSING APPARATUS

Reactive power compensation system

Azetidine derivatives

Flow switch assembly

Four wheel drive vehicles

METHOD AND DEVICE FOR PICTURE CORRECTION IN A PICTURE-IN-PICTURE DISPLAY OF INTERLACED VIDEO SIGNALS

VARIABLE BORE PACKER FOR A RAM-TYPE BLOWOUT PREVENTER

PROCESS FOR CALIBRATING A NETWORK ANALYSER

TRANSITION SIGNALLING DATA COMMUNICATIONS