| 摘要 |
An integrated semiconductor device having a monocrystalline semiconductor substrate of one conductivity type, a diffused layer in the substrate of the opposite conductivity type, a vapor deposited layer formed on the substrate, the vapor deposited layer including a monocrystalline region, and a polycrystalline region of high-impurity concentration surrounding the monocrystalline region and extending from the diffused layer to the surface of the vapor deposited layer, a second monocrystalline region surrounding the polycrystalline region, and monocrystalline regions of high-impurity concentration contiguous to both sides of the polycrystalline region, the monocrystalline regions of high-impurity concentration having the same conductivity type as that of the polycrystalline region and forming a PN junction with the adjoining monocrystalline region.
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