PRODUCTION OF ZINC-SCANDIUM SINGLE CRYSTAL, ELECTRICALLY CONDUCTIVE ZINC-SCANDIUM SINGLE CRYSTAL AND SINGLE CRYSTAL SUBSTRATE

摘要

PURPOSE: To produce a ZnSe single crystal provided with electrical characteristics of low resistance in a grown state of the crystal by subjecting a ZnSe single crystal to crystal growth through adding a boron source to a ZnSe raw material under specified conditions. CONSTITUTION: In this production, a ZnSe single crystal is subjected to crystal growth by adding a boron source (e.g. boron oxide) to a ZnSe raw material so that the raw material contains 1×10<6> to 5&m10<19> atoms/cm<3> boron as an n-type dopant. As a result, the conventional heat treatment in molten zinc of the crystal for providing it with low resistance is not required. Also, at the time of performing the crystal growth of a ZnSe single crystal by a melting growth method such as Bridgeman method or pulling-up method, this crystal growth is preferably performed in an atmosphere to which a Zn vapor pressure in equilibrium with the Zn vapor pressure of the ZnSe molten liquid is applied.