发明名称 Bidirectional Shockley diode
摘要 A bidirectional Shockley diode includes an N-type layer sandwiched between two P-type layers. A first N-type region in the P-type region extends over substantially one half of the upper surface. A second N-type region extends in the P-type layer substantially over one complementary half of the surface of the lower surface. Each first and second region protrudes with respect to the median plane of the component by a length r such that ratio r/e is smaller than 0.5, e being the thickness of the component.
申请公布号 US5569609(A) 申请公布日期 1996.10.29
申请号 US19950465228 申请日期 1995.06.05
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 SALBREUX, JEAN-CLAUDE
分类号 H01L29/861;H01L29/87;(IPC1-7):H01L21/66 主分类号 H01L29/861
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