发明名称 |
Bidirectional Shockley diode |
摘要 |
A bidirectional Shockley diode includes an N-type layer sandwiched between two P-type layers. A first N-type region in the P-type region extends over substantially one half of the upper surface. A second N-type region extends in the P-type layer substantially over one complementary half of the surface of the lower surface. Each first and second region protrudes with respect to the median plane of the component by a length r such that ratio r/e is smaller than 0.5, e being the thickness of the component.
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申请公布号 |
US5569609(A) |
申请公布日期 |
1996.10.29 |
申请号 |
US19950465228 |
申请日期 |
1995.06.05 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
SALBREUX, JEAN-CLAUDE |
分类号 |
H01L29/861;H01L29/87;(IPC1-7):H01L21/66 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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