| 摘要 |
FIELD: radio engineering. SUBSTANCE: device has semiconductor substrate 1, dielectric material layer 2, which is applied on substrate, grid 4, cathode 5, anode 6. Grid is generated in surface layer of substrate and is located under window which is made in layer of dielectric material. Conductivity of grid is opposite to conductivity of substrate. EFFECT: simplified design, increased reliability, decreased parasitic capacitance. 1 dwg |
