PROCESS FOR THE CREATION OF A THERMAL SiO2 LAYER WITH EXTREMELY UNIFORM LAYER THICKNESS

摘要

Disclosed is a reproducible process for making an SiO2 layer by thermal oxidation which assures an extremely uniform thickness of the SiO2 layer of approximately 1 2. The process of the invention comprises the steps growing an initial layer of SiO2 to a defined minimal thickness by dry oxidation and increasing the thickness of the initial layer by simultaneous wet and dry oxidation until the desired final thickness is reached.