Dynamische Speichereinrichtung mit wahlfreiem Zugriff

摘要

A semiconductor memory device comprises first sense amplifier driving lines ( l 2, l 1: Ln, Lp) and second sense amplifier driving lines ( l 31, l 41; l 32, l 42; SAN, SAP), the first sense amplifier driving lines ( l 2, l 1: Ln, Lp) are formed in a first wiring layer (W1) along the word line direction (WL), and the second sense amplifier driving lines ( l 31, l 41; l 32, l 42: SAN, SAP) are formed in a second wiring layer (W2) along the bit line direction (BL). Therefore, a current flowing in the each of the first sense amplifier driving lines ( l 2, l 1: Ln, Lp) becomes small, and the width of the the first sense amplifier driving lines ( l 2, l 1: Ln, Lp) becomes small, so that occupancy area of the semiconductor memory device can be decreased and a large scale integration can be realized.