发明名称 Bias potential generating circuit for bipolar circuit
摘要 The circuit includes a first transistor (2) with its collector connected to a supply potential (1). A first resistor (3) is connected between the base and the collector of the transistor (2). A first current source (5) is connected between the base of the first transistor (2) and a reference potential (4). A second current source (6) is connected between the emitter of the first transistor (2) and the reference potential (4). A second transistor (7) has its base connected to the supply potential (1). Its base is connected to the emitter of the first transistor (2). A third current source (8) is connected between the emitter of the second transistor (7) and the reference potential (4). A third transistor (9) conducts the bias potential at its collector. A second resistor (10) is connected between the emitter of the second transistor (7) and the base of the third transistor (9). A third resistor (11) is connected between the collector of the third transistor (9) and the supply potential (1). A first forward biased diode (12) is connected between the base of the third transistor (9) and the reference potential (4). A fourth resistor (13) is connected between the emitter of the third transistor (9) and the reference potential (4). The fourth resistor (13) has a resistance half of that of the second or third resistors (10,11), which are the same size as each other. The second and third current sources supply a current dependent on the collector current of the third transistor (9).
申请公布号 DE19535807(C1) 申请公布日期 1996.10.24
申请号 DE19951035807 申请日期 1995.09.26
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 WILHELM, WILHELM, DIPL.-ING. DR., 81477 MUENCHEN, DE;HOELZLE, JOSEF, DIPL.-ING. (FH), 86825 BAD WOERISHOFEN, DE
分类号 G05F3/20;(IPC1-7):G05F3/20;H01L23/58 主分类号 G05F3/20
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