Field effect power semiconductor element

摘要

The semiconductor element has a semiconductor body (1) incorporating a number of parallel transistor cells (2), contained in at least one cell field (3), together with temp sensors (4,5) integrated in the semiconductor body at spaced positions. Pref. each cell field has at least one associated temp sensor, the sensors positioned at the points where the highest temps are expected, with a control stage reducing the control voltage for the power semiconductor element as long as at least one temp sensor provides an output signal indicating an overload.