| 摘要 |
An electronic credit card is disclosed, as well as a process for reloading an electronic credit card having an integrated semiconductor circuit that consists of at least one address and control logic circuit and a non-volatile memory with at least one erasable part. The memory addresses of the area of the non-volatile memory in which the value units of the credit card are stored are subdivided into partial zones (stages 1 to 5) of different priorities (orders of priority 1, 8, 64, 512, 4096). Memory addresses may only be erased if all memory addresses of a partial zone having a determined priority are erased at the same time, and each partial zone may only be erased after a carry-over value is written in a previously unwritten memory address of the partial zone having the next higher order or priority. The invention is characterised in that release values stored in a release register of the credit card are associated with the value units of at least the memory addresses of the highest priority partial zone (stage 5). These release values represent a release or a locking state for the associated value stored in the memory addresses of at least the highest priority partial zone. The value stored in the credit card may only be increased after the state of a release value associated with a memory address is changed from a locking state to a release state.
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