| 摘要 |
The invention relates to a composite structure for electronic components, having a base substrate 3 e.g of Si with depressions 2 and having a cover layer 1 forming a hollow structure. The depressions in the base substrate are created prior to the deposition of the cover layer 1 with a clear depth 6 less than half of its clear width 5 measured before application of the cover layer. As the material for the cover layer, which is deposited from a gas phase, a material is used which has a large surface tension favouring three-dimensional growth of the cover layer. Preferably, this of polycrystalline diamond. The structure may be used as a cooling device for components. The depressions 2 may carry flowing fluid or they may be enclosed. In a multi-layered substrate version, one of the layers attracts charge carriers from another layer. |
