| 摘要 |
A method for producing highly pure, monocrystalline silicon layers, with or without dopant additions, upon a wafer shaped substrate body, which comprises thermal dissociating a gaseous silane compound, and by precipitating silicon upon a heated substrate body located in a reaction chamber. The crystalline structure of the silicon body is exposed e.g. by etching and its surface is flooded by the reaction gas. The silane compound is a dihalogen silane of formula SiH2X2, wherein X is chlorine, bromine, or iodine. The thermal dissociation is effected by heating the substrate body at low temperatures, preferably within a temperature range between 600 DEG and 1,000 DEG C.
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