Method of forming raised source/drain regions in an integrated circuit,申请号EP19950307656-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Method of forming raised source/drain regions in an integrated circuit
摘要
申请公布号	EP0709880(A3)	申请公布日期	1996.10.23
申请号	EP19950307656	申请日期	1995.10.27
申请人	SGS-THOMSON MICROELECTRONICS, INC.	发明人	CHAN, TSIU CHIU;SMITH, GREGORY C.
分类号	H01L21/28;H01L21/285;H01L21/336;H01L29/08;H01L29/417;H01L29/45;H01L29/78;(IPC1-7):H01L21/336	主分类号	H01L21/28
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Cork screw with integral intelligent thermometer

Signal band expanding method and apparatus and signal synthesis method and apparatus

Broadband communication system and method

Scanned beam display with adjustable accommodation

Storage system including means for management of a memory with anti-attrition, and process of anti-attrition management of a memory

Accurate positioning of data marks and spaces relative to groove wobble on a rewritable optical disc

Scene change detector for video data

Optical recording method and apparatus for recording a link part according to an external link method

Computer system

Recovery process for volatile compounds from solids in aqueous solution

Use of tolterodine to treat asthma

Medical infusion device with a source of controlled compliance

Combination dosage form comprising cetirizine and pseudoephedrine

Compositions and methods for treating eye discomfort

Method and apparatus for measuring seat occupant weight

Frozen beverage machine

Magneto-resistive device and magneto-resistive effect type storage device

Hair conditioner composition that is non-irritating to the eyes

Subsea pig launcher