| 摘要 |
An oxygen removing method comprises a step of removing oxygen by irradiating an As molecular beam to the semiconductor in hydrogen plasma. A contaminant removing method comprises a first step of removing contaminants principally other than oxygen, and a second step of removing principally oxygen by irradiating an As molecular beam to the semiconductor in hydrogen plasma. A semiconductor device fabricating method comprises, in addition to the above first and second steps, a step of developing growth of a semiconductor layer, wherein transfer passages between the steps are held under vacuum. With these methods, contaminants, particularly oxygen, on various semiconductors are removed without damaging the semiconductors, while ensuring high efficiency and good surface reconstruction. <MATH> |
