发明名称 |
Method of boron diffusion into semiconductor wafers |
摘要 |
<p>A method of diffusing boron into semiconductor wafers is disclosed which is made of essentially boron deposition and boron diffusion steps. The deposition step is performed from 900 to 1,000 DEG C and the diffusion step at a temperature substantially equal to or higher than the temperature at the deposition step. Oxidation induced stacking faults are greatly reduced. <IMAGE></p> |
申请公布号 |
EP0472012(B1) |
申请公布日期 |
1996.10.23 |
申请号 |
EP19910112736 |
申请日期 |
1991.07.29 |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED |
发明人 |
KATAYAMA, MASATAKE;FUJIYA, SHOICHI;MOROGA, ISAO;SHINOMIYA, MASARU |
分类号 |
H01L21/225;(IPC1-7):H01L21/225;H01L21/22 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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