MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

forming a first remained layer(23) at a preceding process before forming two layers to measure on the region with a pattern overlay measuring mark on a semiconductor wafer(21); forming an auxiliary pattern(26) exposing the wafer by photolithography of the first remained layer(23); forming a second remained layer(27); forming a rectangular outer box(25) which reveals the auxiliary pattern(26) and the wafer, including the auxiliary pattern(26) inside by etching the second remained layer(27); forming a third remained layer(32) on the entire surface; and forming an inner box(29) included in the auxiliary pattern(26) by photoresist.