| 摘要 |
PURPOSE: To provide the sputtering device for forming a dielectric film with the generation of the abnormal discharge and dust minimized in the sputtering device in sputtering and capable of maintaining a stabilized plasma discharge for a long time. CONSTITUTION: The device parts 7 having a ground potential are provided around the opposed substrate 8 and target 3, and a dielectric film is formed on the substrate by using the ceramic target 3. In this sputtering device 1, at least the surface of the parts 7 on the space 14 side wherein plasma is coated with an insulating ceramic film consisting of Al2 O3 , TiO2 , SiO2 , ZrO2 , MgO or B4 C in 0.1-5000μm thickness by CVD, PVD, sputtering, coating or thermal spraying.
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