发明名称 Method and system for rewriting data in a non-volatile memory a predetermined large number of times
摘要 A method and system for storing data in a non-volatile memory having a plurality of memory regions each assigned with a serial address to permit serial accessing of the plurality of memory regions. Each memory region has a writing count number storing region and a data storing region. In accessing the non-volatile memory, contents of the writing count number storing regions are checked serially to locate an effective memory region having the last serial address among memory regions having the same writing count number. In writing data into the non-volatile memory, a memory region having an address following that of the located effective memory region will be accessed, and in reading data from the non-volatile memory, the located effective memory region will be accessed. The final address of the non-volatile memory is followed by the first address thereof, thus permitting circular or access to the serially addressed memory regions of the non-volatile memory.
申请公布号 US5568626(A) 申请公布日期 1996.10.22
申请号 US19940193913 申请日期 1994.02.03
申请人 NEC CORPORATION 发明人 TAKIZAWA, HIROSHI
分类号 G11C29/00;G11C16/02;G11C16/10;G11C16/34;G11C17/00;G11C29/04;(IPC1-7):G06F12/06 主分类号 G11C29/00
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