| 摘要 |
An insulated gate semiconductor device such as a MOSFET realizes high-frequency high-output operations. A first main electrode (1a) set at grounding potential is formed on the bottom surface of a substrate. A second main electrode region (4) set at power source potential is formed on the top surface of the substrate. This structure involves very low grounding inductance. A buried insulation film (9) is formed under the second main electrode region, to reduce capacitance and improve power gains at high frequencies. Unlike an ordinary SOI semiconductor device, the buried insulation film of this MOSFET is not entirely formed through the substrate. A conductive region (10) is formed from the top surface to the bottom surface of the substrate at a location where the insulation film is not present, to improve heat dissipation and provide high output power. The buried insulation film (9) is formed by SIMOX, buried epitaxy, or silicon direct bonding (SDB) method.
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