发明名称 |
MULTICHIP SEMICONDUCTOR STRUCTURE AND ITS FORMATION |
摘要 |
PROBLEM TO BE SOLVED: To provide a structure which can be rewired even through chips are finally connected therebetween by electrically connecting a fuse in series to at least one wire drawn out of at least one semiconductor device chip in a stack. SOLUTION: Each drawn wire is positioned on an end surface of a stack, and electrically connected to each connect assembly 22. Each connect assembly 22 comprises a contact pad 26 further electrically connected through a T-shaped connect pad 24 and a fuse wire 28. The fuse wire 28 and the T shaped contact pad 24 are electrically connected to the corresponding drawn wire 20 through the contact pad 26. Accordingly, burn-in process need not be interrupted, and the semiconductor device chip 14 can be simultaneously subjected to burn-in stress on the long stack and examined using each connect assembly 22, even though one or more chips 14 are short-circuited in the stack. |
申请公布号 |
JPH08279587(A) |
申请公布日期 |
1996.10.22 |
申请号 |
JP19960049942 |
申请日期 |
1996.03.07 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
BURUNO ROBERUTO EIMII;JIYON EDOWAADO KUROONIN;ANDORE KONRATSUDO FUOOSHIA;JIEIMUZU MARUKU RIASU;PATORISHIA MAKUGINESU MARUMIRION;ANTONII MAIKERU PARAGONIA;BAANADETSUTO AN PIAASON;DENISU AASAA SHIYUMITO |
分类号 |
H01L21/82;G01R31/28;H01L21/66;H01L23/52;H01L25/065;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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