发明名称 |
Semiconductor device |
摘要 |
An object of the invention is to provide a capacitor having good anti-leak characteristics and good breakdown voltage characteristics. A transfer gate transistor having source/drain regions is formed on a surface of a silicon substrate. There is provided a lower electrode layer connected to the source/drain region through a plug layer which fills a contact hole formed at an interlayer insulating film. On the lower electrode layer, there is formed a capacitor insulating layer which includes a ferroelectric layer and exposes at least a sidewall surface of the lower electrode layer. The exposed sidewall surface of the lower electrode layer is covered with a sidewall insulating layer which is formed on a top surface of the interlayer insulating film and has a sidewall spacer configuration. The lower electrode layer is covered with an upper electrode layer with the sidewall insulating layer and capacitor insulating layer therebetween.
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申请公布号 |
US5567964(A) |
申请公布日期 |
1996.10.22 |
申请号 |
US19950526392 |
申请日期 |
1995.09.11 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KASHIHARA, KEIICHIRO;ITOH, HIROMI |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;H01L27/115;(IPC1-7):H01L27/108;H01L29/76;H01L27/088 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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