| 摘要 |
PURPOSE: To reduce weight, thickness and sizes, improve heat dissipation and reduce cost of a multi-step connection semiconductor device, which is formed by connecting a semiconductor element with a carrier by metal fine wire. CONSTITUTION: Semiconductor elements 4 are connected to a carrier 1 provided with edge side through holes by multi-step connection by applying adhesive 5 between the semiconductor element 4 and the semiconductor element 4'. When the semiconductor elements 4 are bonded, the semiconductor elements are subsequently connected by metal fine wire 6 by wire bonding. An opening 9 is formed on the cavity of the carrier 1, the semiconductor element 4 is placed in the opening 9, and is connected by metal fine wire 6. Then, a desired thickness is provided by grinding, polishing, using a surface grinder, etching, etc., from the rear side of the semiconductor element 4 and is connected by multi-step connection. When a heat dissipating board 8 is bonded, heat dissipating effect is improved, and the reliability of the semiconductor device is improved. |
