| 摘要 |
PURPOSE: To provide a plasma CVD device which does not require a large space for installation for the production of a solar cell having a high photoelectric conversion efficiency. CONSTITUTION: The device is equipped with an electrode 2 where a substrate is to be mounted and counter electrodes 10a, 10b, 10c facing the electrode 2 for respective p, i, n-type amorphous semiconductor layers. The counter electrode which is not used is held in an area out of the plasma region so that a film containing impurities which give the conductivity type does not deposit on the counter electrode used to form an i-type amorphous semiconductor layer. Further, deposition of the film on the inner wall of the reaction chamber 1 is little caused. Therefore, since the impurities which give the conductivity type are not mixed with an i-type amorphous semiconductor layer, a solar cell having a high photoelectric conversion efficiency can be obtd. |
