SILICON SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: To suppress the residual lattice strain by the lattice constant difference due to fine defective density difference near surface by a method wherein the fine defective density within a specific range from the surface of a silicon semiconductor substrate after deposition heat treatment is specified to be in the region within a specific range. CONSTITUTION: A silicon semiconductor substrate is deposition heat-treated meeting the requirements for specifying the interlattice oxygen concentration ratio inside exceeding 50μm to the part not exceeding 3μm from the surface of said substrate to be exceeding four times as well as said concentration in the part not exceeding 3μm to be not exceeding 3×10<17> atoms/cm<3> for deposition heat treatment. After the heat treatment, the fine defective density of 100μm-500μm from the surface is specified to be in the region of 5×10<6> -10<8> cm<-3> . Through these procedures, the residual lattice strain by the lattice constant difference due to the fine defective density difference near the surface of the silicon semiconductor substrate can be suppressed.