| 发明名称 |
Process for plasma enhanced anneal of titanium nitride |
| 摘要 |
A titanium nitride film is annealed at a temperature less than 500 DEG C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.
|
| 申请公布号 |
US5567483(A) |
申请公布日期 |
1996.10.22 |
| 申请号 |
US19950461665 |
申请日期 |
1995.06.05 |
| 申请人 |
SONY CORPORATION;MATERIALS RESEARCH CORPORATION |
发明人 |
FOSTER, ROBERT F.;HILLMAN, JOSEPH T.;ARORA, RIKHIT |
| 分类号 |
C23C16/56;H01L21/28;H01L21/285;H01L21/321;(IPC1-7):H05H1/00 |
主分类号 |
C23C16/56 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
