| 摘要 |
An electron beam transfer apparatus in which an electron beam emitted from an electron gun (10) is led to a mask (M), and the electron beam having passed through the mask (M) is made incident on a wafer (W) at an intensity correlating with the degree of scattering of the electron beam. The potential difference between the electron gun (10) and the mask (M) is set larger than the potential difference between the electron gun (10) and the wafer (W) so that the electron beam passing through the mask (M) is incident on the wafer (W) at a lower speed than that of the electron beam at the time passing through the mask (M). Thus, it is possible to suppress the reduction of the sensitivity of a resist coated on the wafer (W) and the heat generation at the wafer (W) while satisfactorily obtaining the desired effect of the scattering mask and conditions advantageous to the electron beam as a charged particle beam.
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