Infrared ray sensor and its producing method

摘要

The present invention is related to an infrared ray sensor including a substrate having a p-n junction, a ferroelectric film formed on a surface of the substrate for sensing infrared ray, and a metal film formed on the ferroelectric film for serving as an infrared-ray receiving electrode. The present invention is also related to a method for producing the IR sensor including steps of: providing the substrate having the p-n junction; depositing the ferroelectric film on the surface of the substrate in a radio frequency (RF) sputtering system; and depositing the metal film on the ferroelectric film by vapor evaporation. Alternatively, the deposition of the ferroelectric film on the surface of the substrate can be performed in a KrF pulse-mode laser evaporation system.