发明名称 |
Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain |
摘要 |
An elevated source/drain structure is described in which the channel region is thinned by local oxidation and wet etch while the source/drain region remained thick. This structure achieves source/drain resistances as small as 300 ohm- mu m for NMOS, which makes possible high drive currents in deep submicron thin-film SOI/MOSFET.
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申请公布号 |
US5567966(A) |
申请公布日期 |
1996.10.22 |
申请号 |
US19950478310 |
申请日期 |
1995.06.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HWANG, JEONG-MO |
分类号 |
H01L29/45;H01L29/49;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L29/76 |
主分类号 |
H01L29/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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