发明名称 Artificial lattice film and magneto-resistance effect element using the same
摘要 An artificial lattice film is constituted as a multilayered film in which magnetic layers containing Cu of 1 DIFFERENCE 50 atomic percentage and at least one component selected from Fe, Ni and Co and conductive layers are stacked one after another. By forming such an artificial lattice film on a non-magnetic substrate, a magneto-resistance effect element having excellent characteristic for use as magnetic head or magnetic sensor is provided.
申请公布号 US5568115(A) 申请公布日期 1996.10.22
申请号 US19940356588 申请日期 1994.12.15
申请人 SONY CORPORATION 发明人 KANO, HIROSHI;SUZUKI, ATSUKO;KAGAWA, KIYOSHI;OKABE, AKIHIKO
分类号 G11B5/39;H01F10/08;H01F10/14;H01F10/32;H01L43/08;H01L43/10;(IPC1-7):H01L43/00 主分类号 G11B5/39
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